PJD55N03_L2_00001
Panjit International Inc.
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
$0.59
Available to order
Reference Price (USD)
1+
$0.59000
500+
$0.5841
1000+
$0.5782
1500+
$0.5723
2000+
$0.5664
2500+
$0.5605
Exquisite packaging
Discount
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Meet the PJD55N03_L2_00001 by Panjit International Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The PJD55N03_L2_00001 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Panjit International Inc..
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 54W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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