PJP100P03_T0_00001
Panjit International Inc.
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
$1.37
Available to order
Reference Price (USD)
1+
$1.37000
500+
$1.3563
1000+
$1.3426
1500+
$1.3289
2000+
$1.3152
2500+
$1.3015
Exquisite packaging
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Discover the PJP100P03_T0_00001 from Panjit International Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the PJP100P03_T0_00001 ensures reliable performance in demanding environments. Upgrade your circuit designs with Panjit International Inc.'s cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6067 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 119W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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