PJP6NA40_T0_00001
Panjit International Inc.
Panjit International Inc.
400V N-CHANNEL MOSFET
$1.18
Available to order
Reference Price (USD)
1+
$1.18000
500+
$1.1682
1000+
$1.1564
1500+
$1.1446
2000+
$1.1328
2500+
$1.121
Exquisite packaging
Discount
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Meet the PJP6NA40_T0_00001 by Panjit International Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The PJP6NA40_T0_00001 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Panjit International Inc..
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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