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TK3R1A04PL,S4X

Toshiba Semiconductor and Storage
TK3R1A04PL,S4X Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 82A TO220SIS
$1.33
Available to order
Reference Price (USD)
1+
$1.74000
50+
$1.40500
100+
$1.26450
500+
$0.98350
1,000+
$0.81490
2,500+
$0.78680
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 4.5V
  • Vgs(th) (Max) @ Id: 2.4V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 63.4 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 20 V
  • FET Feature: -
  • Power Dissipation (Max): 36W (Tc)
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack

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