PMBFJ176,215
NXP USA Inc.
NXP USA Inc.
JFET P-CH 30V 0.3W SOT23
$0.14
Available to order
Reference Price (USD)
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$0.14000
500+
$0.1386
1000+
$0.1372
1500+
$0.1358
2000+
$0.1344
2500+
$0.133
Exquisite packaging
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The PMBFJ176,215 JFET by NXP USA Inc. is a versatile addition to our Discrete Semiconductor Products range. Optimized for low-power applications, this transistor delivers microampere-level drain current with precise control characteristics. Its unique selling points include industry-leading Yfs linearity and ultra-stable operation over decades of use. Common implementations include biomedical sensors, environmental monitoring equipment, and battery-powered field devices. The PMBFJ176,215 performs exceptionally well in electrometer-grade input stages, photovoltaic detectors, and ultra-low-noise oscilloscopes. Designed with reliability in mind, it features proprietary passivation technology that prevents moisture ingress and ensures stable parameters throughout the product lifecycle.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 30 V
- Drain to Source Voltage (Vdss): 30 V
- Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds: 8pF @ 10V (VGS)
- Resistance - RDS(On): 250 Ohms
- Power - Max: 300 mW
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23 (TO-236AB)
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