PMGD130UN,115
NXP USA Inc.
NXP USA Inc.
MOSFET 2N-CH 20V 1.2A 6TSSOP
$0.09
Available to order
Reference Price (USD)
1+
$0.09000
500+
$0.0891
1000+
$0.0882
1500+
$0.0873
2000+
$0.0864
2500+
$0.0855
Exquisite packaging
Discount
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The PMGD130UN,115 by NXP USA Inc. is a top-tier selection in the Discrete Semiconductor Products range. This Transistors - FETs, MOSFETs - Arrays unit boasts high current capacity and excellent thermal performance, making it a go-to solution for power electronics. Whether you're working on electric vehicles, solar inverters, or industrial machinery, the PMGD130UN,115 offers superior functionality and longevity. Trust NXP USA Inc. to provide semiconductor components that push the boundaries of innovation.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.2A
- Rds On (Max) @ Id, Vgs: 145mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
- Power - Max: 390mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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