PMV56XN,215
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 20V 3.76A TO236AB
$0.10
Available to order
Reference Price (USD)
1+
$0.10000
500+
$0.099
1000+
$0.098
1500+
$0.097
2000+
$0.096
2500+
$0.095
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the PMV56XN,215 from NXP USA Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the PMV56XN,215 ensures reliable performance in demanding environments. Upgrade your circuit designs with NXP USA Inc.'s cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id: 650mV @ 1mA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.92W (Tc)
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23 (TO-236AB)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Diodes Incorporated
DMP2240UWQ-7
Microsemi Corporation
APT8024B2LLG
Vishay Siliconix
SIE812DF-T1-GE3
onsemi
NTD70N03R-001
onsemi
3LN01SS-TL-H
Nexperia USA Inc.
PMZ350UPEYL
STMicroelectronics
STD5N52K3
Vishay Siliconix
SQS401EN-T1_BE3
STMicroelectronics
STW30NM50N
onsemi