PMZ370UNEYL
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 900MA DFN1006-3
$0.42
Available to order
Reference Price (USD)
10,000+
$0.05896
30,000+
$0.05528
50,000+
$0.04901
100,000+
$0.04791
Exquisite packaging
Discount
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Discover the PMZ370UNEYL from Nexperia USA Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the PMZ370UNEYL ensures reliable performance in demanding environments. Upgrade your circuit designs with Nexperia USA Inc.'s cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 490mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1.05V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.16 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-883
- Package / Case: SC-101, SOT-883
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