PSMN1R9-40YSDX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 200A LFPAK56
$1.97
Available to order
Reference Price (USD)
1+
$1.97000
500+
$1.9503
1000+
$1.9306
1500+
$1.9109
2000+
$1.8912
2500+
$1.8715
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PSMN1R9-40YSDX single MOSFET from Nexperia USA Inc. is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the PSMN1R9-40YSDX is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6198 pF @ 20 V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 194W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
Infineon Technologies
IPA086N10N3GXKSA1
IXYS
IXTQ16N50P
STMicroelectronics
STD95N2LH5
Texas Instruments
TPIC5223LD
Rectron USA
RM20P30D3
Vishay Siliconix
SIDR608EP-T1-RE3
Microchip Technology
MSC025SMA120B4
Vishay Siliconix
SUD19P06-60-GE3
Panjit International Inc.
PJQ4413P_R2_00001
onsemi