SIDR608EP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 45 V (D-S) 175C MOSFET
$2.76
Available to order
Reference Price (USD)
1+
$2.76000
500+
$2.7324
1000+
$2.7048
1500+
$2.6772
2000+
$2.6496
2500+
$2.622
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIDR608EP-T1-RE3 by Vishay Siliconix is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Vishay Siliconix for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 228A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 7.5W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
Related Products
Microchip Technology
MSC025SMA120B4
Vishay Siliconix
SUD19P06-60-GE3
Panjit International Inc.
PJQ4413P_R2_00001
onsemi
FDMA86551L
Vishay Siliconix
SIHG17N80E-GE3
IXYS
IXFX150N30P3
onsemi
MMSF1310R2
Infineon Technologies
BSC097N06NSATMA1
Rectron USA
RM6005S4
Infineon Technologies