PXN5R4-30QLJ
Nexperia USA Inc.
Nexperia USA Inc.
PXN5R4-30QL/SOT8002/MLPAK33
$0.71
Available to order
Reference Price (USD)
1+
$0.71000
500+
$0.7029
1000+
$0.6958
1500+
$0.6887
2000+
$0.6816
2500+
$0.6745
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the PXN5R4-30QLJ from Nexperia USA Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the PXN5R4-30QLJ ensures reliable performance in demanding environments. Upgrade your circuit designs with Nexperia USA Inc.'s cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 66A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.4mOhm @ 14.2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 39W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MLPAK33
- Package / Case: 8-PowerVDFN
Related Products
onsemi
NTTFS4C53NTAG
Diotec Semiconductor
DIT095N08
Taiwan Semiconductor Corporation
TSM320N03CX RFG
Infineon Technologies
IRF3007STRLPBF
Panjit International Inc.
PJC7439-AU_R1_000A1
IXYS
IXFT220N20X3HV
UnitedSiC
UF3C065030B3
IXYS
IXFR80N50P
IXYS
IXTH3N200P3HV
Microchip Technology