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UF3C065030B3

UnitedSiC
UF3C065030B3 Preview
UnitedSiC
MOSFET N-CH 650V 65A TO263
$19.94
Available to order
Reference Price (USD)
1+
$19.94000
500+
$19.7406
1000+
$19.5412
1500+
$19.3418
2000+
$19.1424
2500+
$18.943
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: -
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
  • Vgs(th) (Max) @ Id: 6V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 242W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2Pak)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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