NXV75UPR
Nexperia USA Inc.
Nexperia USA Inc.
NXV75UP/SOT23/TO-236AB
$0.39
Available to order
Reference Price (USD)
1+
$0.39000
500+
$0.3861
1000+
$0.3822
1500+
$0.3783
2000+
$0.3744
2500+
$0.3705
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NXV75UPR by Nexperia USA Inc. is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Nexperia USA Inc. for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 1.8A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 340mW (Ta), 2.1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Toshiba Semiconductor and Storage
TK6A60W,S4VX
IXYS
IXTH48N65X2
Infineon Technologies
IPP100N10S305AKSA1
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJL2301F-F2-0000HF
Toshiba Semiconductor and Storage
TW060N120C,S1F
NTE Electronics, Inc
NTE222
Infineon Technologies
IPP65R110CFDAAKSA1
Fairchild Semiconductor
FDB8453LZ
Vishay Siliconix
IRFP350LCPBF
Sanyo