R6004JNXC7G
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 4A TO220FM
$2.56
Available to order
Reference Price (USD)
1+
$2.56000
500+
$2.5344
1000+
$2.5088
1500+
$2.4832
2000+
$2.4576
2500+
$2.432
Exquisite packaging
Discount
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The R6004JNXC7G by Rohm Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the R6004JNXC7G is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 1.43Ohm @ 2A, 15V
- Vgs(th) (Max) @ Id: 7V @ 450µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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