R6530KNXC7G
Rohm Semiconductor
Rohm Semiconductor
650V 30A TO-220FM, HIGH-SPEED SW
$6.99
Available to order
Reference Price (USD)
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$6.99000
500+
$6.9201
1000+
$6.8502
1500+
$6.7803
2000+
$6.7104
2500+
$6.6405
Exquisite packaging
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Upgrade your designs with the R6530KNXC7G by Rohm Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the R6530KNXC7G is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 86W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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