R6535KNZ4C13
Rohm Semiconductor
Rohm Semiconductor
650V 35A TO-247, HIGH-SPEED SWIT
$7.86
Available to order
Reference Price (USD)
1+
$7.86000
500+
$7.7814
1000+
$7.7028
1500+
$7.6242
2000+
$7.5456
2500+
$7.467
Exquisite packaging
Discount
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Meet the R6535KNZ4C13 by Rohm Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The R6535KNZ4C13 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Rohm Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1.21mA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 379W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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