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R8008ANJGTL

Rohm Semiconductor
R8008ANJGTL Preview
Rohm Semiconductor
NCH 800V 8A POWER MOSFET : R8008
$6.10
Available to order
Reference Price (USD)
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$6.10000
500+
$6.039
1000+
$5.978
1500+
$5.917
2000+
$5.856
2500+
$5.795
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.03Ohm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 195W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263S
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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