RF4C100BCTCR
Rohm Semiconductor
Rohm Semiconductor
MOSFET P-CH 20V 10A HUML2020L8
$0.89
Available to order
Reference Price (USD)
1+
$0.89000
500+
$0.8811
1000+
$0.8722
1500+
$0.8633
2000+
$0.8544
2500+
$0.8455
Exquisite packaging
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The RF4C100BCTCR from Rohm Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the RF4C100BCTCR offers the precision and reliability you need. Trust Rohm Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: HUML2020L8
- Package / Case: 8-PowerUDFN
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