RGS80TSX2GC11
Rohm Semiconductor
Rohm Semiconductor
10US SHORT-CIRCUIT TOLERANCE, 12
$10.65
Available to order
Reference Price (USD)
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$10.65000
500+
$10.5435
1000+
$10.437
1500+
$10.3305
2000+
$10.224
2500+
$10.1175
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The RGS80TSX2GC11 by Rohm Semiconductor is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the RGS80TSX2GC11 delivers robust performance. Rohm Semiconductor's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate RGS80TSX2GC11 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 555 W
- Switching Energy: 3mJ (on), 3.1mJ (off)
- Input Type: Standard
- Gate Charge: 104 nC
- Td (on/off) @ 25°C: 49ns/199ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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