RGT8NS65DGC9
Rohm Semiconductor
Rohm Semiconductor
IGBT
$2.21
Available to order
Reference Price (USD)
1+
$2.21000
500+
$2.1879
1000+
$2.1658
1500+
$2.1437
2000+
$2.1216
2500+
$2.0995
Exquisite packaging
Discount
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Experience top-tier performance with the RGT8NS65DGC9 Single IGBT transistor from Rohm Semiconductor. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the RGT8NS65DGC9 ensures energy efficiency and reliability. Trust Rohm Semiconductor's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 8 A
- Current - Collector Pulsed (Icm): 12 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
- Power - Max: 65 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 13.5 nC
- Td (on/off) @ 25°C: 17ns/69ns
- Test Condition: 400V, 4A, 50Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: TO-262
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