RJH1CM5DPQ-E0#T2
Renesas Electronics America Inc

Renesas Electronics America Inc
IGBT, 30A, 1200V, N-CHANNEL, TO-
$8.84
Available to order
Reference Price (USD)
1+
$8.84000
500+
$8.7516
1000+
$8.6632
1500+
$8.5748
2000+
$8.4864
2500+
$8.398
Exquisite packaging
Discount
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The RJH1CM5DPQ-E0#T2 by Renesas Electronics America Inc is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the RJH1CM5DPQ-E0#T2 delivers robust performance. Renesas Electronics America Inc's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate RJH1CM5DPQ-E0#T2 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 15A
- Power - Max: 245 W
- Switching Energy: 1.6mJ (on), 700µJ (off)
- Input Type: Standard
- Gate Charge: 74 nC
- Td (on/off) @ 25°C: 40ns/100ns
- Test Condition: 600V, 15A, 5Ohm, 15V
- Reverse Recovery Time (trr): 200 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247