RJK0856DPB-00#J5
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 80V 35A LFPAK
$1.49
Available to order
Reference Price (USD)
1+
$1.48630
500+
$1.471437
1000+
$1.456574
1500+
$1.441711
2000+
$1.426848
2500+
$1.411985
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the RJK0856DPB-00#J5 single MOSFET from Renesas Electronics America Inc. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Renesas Electronics America Inc's RJK0856DPB-00#J5 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8.9mOhm @ 17.5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK
- Package / Case: SC-100, SOT-669
Related Products
STMicroelectronics
STW7N90K5
Vishay Siliconix
SQS460EN-T1_GE3
STMicroelectronics
STP8N120K5
IXYS Integrated Circuits Division
CPC3703CTR
Diodes Incorporated
ZXMP4A16GQTC
Panjit International Inc.
PJC7476_R1_00001
onsemi
FDMA430NZ
onsemi
NTD18N06LT4G
Diodes Incorporated
ZVN4525E6TA
IXYS