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RM10N30D2

Rectron USA
RM10N30D2 Preview
Rectron USA
MOSFET N-CH 30V 10A 6PQFN
$0.07
Available to order
Reference Price (USD)
1+
$0.07200
500+
$0.07128
1000+
$0.07056
1500+
$0.06984
2000+
$0.06912
2500+
$0.0684
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 730mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-PQFN (2x2)
  • Package / Case: 6-WDFN Exposed Pad

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