RM10N30D2
Rectron USA

Rectron USA
MOSFET N-CH 30V 10A 6PQFN
$0.07
Available to order
Reference Price (USD)
1+
$0.07200
500+
$0.07128
1000+
$0.07056
1500+
$0.06984
2000+
$0.06912
2500+
$0.0684
Exquisite packaging
Discount
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Upgrade your designs with the RM10N30D2 by Rectron USA, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the RM10N30D2 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 730mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-PQFN (2x2)
- Package / Case: 6-WDFN Exposed Pad