Shopping cart

Subtotal: $0.00

RM2304

Rectron USA
RM2304 Preview
Rectron USA
MOSFET N-CHANNEL 30V 3.6A SOT23
$0.04
Available to order
Reference Price (USD)
1+
$0.04500
500+
$0.04455
1000+
$0.0441
1500+
$0.04365
2000+
$0.0432
2500+
$0.04275
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 58mOhm @ 3.6A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 1.7W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3

Related Products

Vishay Siliconix

SISS26DN-T1-GE3

Yangzhou Yangjie Electronic Technology Co.,Ltd

YJG95G06A-F1-0100HF

Infineon Technologies

IPA028N08N3GXKSA1

Toshiba Semiconductor and Storage

TK12E60W,S1VX

Vishay Siliconix

SI3430DV-T1-GE3

NXP USA Inc.

PMN50UPE,115

Toshiba Semiconductor and Storage

TK110P10PL,RQ

STMicroelectronics

STB28N60M2

Top