RN2903,LXHF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
$0.46
Available to order
Reference Price (USD)
1+
$0.46000
500+
$0.4554
1000+
$0.4508
1500+
$0.4462
2000+
$0.4416
2500+
$0.437
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RN2903,LXHF(CT from Toshiba Semiconductor and Storage is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision applications. This pre-biased transistor array integrates multiple BJTs in a compact package, offering excellent thermal stability and consistent performance. Ideal for amplification and switching circuits, the RN2903,LXHF(CT ensures low noise and high gain, making it a reliable choice for industrial and consumer electronics. Common applications include motor control, LED drivers, and audio amplifiers. With robust construction and advanced manufacturing techniques, Toshiba Semiconductor and Storage's RN2903,LXHF(CT delivers unmatched reliability in demanding environments.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
Related Products
Toshiba Semiconductor and Storage
RN1901FETE85LF
Nexperia USA Inc.
PEMH9,115
Nexperia USA Inc.
PEMD20,115
Nexperia USA Inc.
PUMH19,115
onsemi
UMC3NT1G
onsemi
EMC5DXV5T1
Diodes Incorporated
DDC114TH-7
Panasonic Electronic Components
XP0421100L
NXP USA Inc.
PBLS1504V,115
onsemi