RN2962(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.2W US6
$0.49
Available to order
Reference Price (USD)
3,000+
$0.08820
6,000+
$0.07938
15,000+
$0.07056
30,000+
$0.06615
75,000+
$0.05880
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing Toshiba Semiconductor and Storage's RN2962(TE85L,F), a premium pre-biased BJT array that combines innovation with practicality. This transistor array is optimized for low-voltage applications, offering high gain and minimal distortion. Its compact footprint and integrated bias network make it perfect for wearable devices, smart home systems, and medical instruments. Toshiba Semiconductor and Storage's dedication to excellence ensures that the RN2962(TE85L,F) meets the most demanding specifications. With superior ESD protection and long-term stability, this product is a must-have for modern electronic designs.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
Related Products
Nexperia USA Inc.
PUMH2F
onsemi
NSBA113EDXV6T1G
Nexperia USA Inc.
PEMB9,315
Nexperia USA Inc.
PUMH9,165
Nexperia USA Inc.
PRMH11Z
NXP USA Inc.
PBLS2003S,115
Toshiba Semiconductor and Storage
RN4983FE,LF(CT
Panasonic Electronic Components
DMC564070R
Diodes Incorporated
DDC114TU-7-F
onsemi