RQ3E070BNTB1
Rohm Semiconductor
Rohm Semiconductor
NCH 30V 15A POWER MOSFET: RQ3E07
$0.41
Available to order
Reference Price (USD)
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$0.41118
500+
$0.4070682
1000+
$0.4029564
1500+
$0.3988446
2000+
$0.3947328
2500+
$0.390621
Exquisite packaging
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Optimize your power electronics with the RQ3E070BNTB1 single MOSFET from Rohm Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the RQ3E070BNTB1 combines cutting-edge technology with Rohm Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 13W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
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