RS1E200BNTB
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 30V 20A 8HSOP
$0.68
Available to order
Reference Price (USD)
2,500+
$0.18910
5,000+
$0.17690
12,500+
$0.17080
Exquisite packaging
Discount
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Upgrade your designs with the RS1E200BNTB by Rohm Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the RS1E200BNTB is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 25W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
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