SCT3017ALGC11
Rohm Semiconductor
Rohm Semiconductor
650V, 118A, THD, TRENCH-STRUCTUR
$122.40
Available to order
Reference Price (USD)
1+
$122.40000
500+
$121.176
1000+
$119.952
1500+
$118.728
2000+
$117.504
2500+
$116.28
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SCT3017ALGC11 by Rohm Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SCT3017ALGC11 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 22.1mOhm @ 47A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 23.5mA
- Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 2884 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 427W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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