SCT3105KRC14
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 24A TO247-4L
$22.80
Available to order
Reference Price (USD)
1+
$22.80000
500+
$22.572
1000+
$22.344
1500+
$22.116
2000+
$21.888
2500+
$21.66
Exquisite packaging
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Optimize your power electronics with the SCT3105KRC14 single MOSFET from Rohm Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SCT3105KRC14 combines cutting-edge technology with Rohm Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 134W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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