SI4425BDY-T1-E3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 8.8A 8SO
$1.35
Available to order
Reference Price (USD)
2,500+
$0.50299
5,000+
$0.47937
12,500+
$0.46250
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SI4425BDY-T1-E3 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's SI4425BDY-T1-E3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
IRFZ40PBF
STMicroelectronics
STD2N105K5
Diodes Incorporated
ZXMN2A14FTA
STMicroelectronics
STL38N65M5
Diodes Incorporated
DMP2040USS-13
Toshiba Semiconductor and Storage
TK17E65W,S1X
onsemi
FDP22N50N
Diodes Incorporated
DMT6017LFDF-13
Vishay Siliconix
SQJ443EP-T1_BE3
STMicroelectronics