SIA910EDJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 12V 4.5A SC-70-6
$0.62
Available to order
Reference Price (USD)
3,000+
$0.25425
6,000+
$0.23775
15,000+
$0.22950
30,000+
$0.22500
Exquisite packaging
Discount
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Enhance your circuit designs with the SIA910EDJ-T1-GE3, a premium Transistors - FETs, MOSFETs - Arrays product from Vishay Siliconix. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the SIA910EDJ-T1-GE3 delivers consistent and reliable operation. Vishay Siliconix's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 4.5A
- Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds: 455pF @ 6V
- Power - Max: 7.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SC-70-6 Dual
- Supplier Device Package: PowerPAK® SC-70-6 Dual
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