SIA938DJT-T1-GE3
Vishay Siliconix
Vishay Siliconix
DUAL N-CHANNEL 20-V (D-S) MOSFET
$0.70
Available to order
Reference Price (USD)
1+
$0.70000
500+
$0.693
1000+
$0.686
1500+
$0.679
2000+
$0.672
2500+
$0.665
Exquisite packaging
Discount
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Enhance your circuit designs with the SIA938DJT-T1-GE3, a premium Transistors - FETs, MOSFETs - Arrays product from Vishay Siliconix. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the SIA938DJT-T1-GE3 delivers consistent and reliable operation. Vishay Siliconix's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 4.5A (Tc)
- Rds On (Max) @ Id, Vgs: 21.5mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 10V
- Power - Max: 1.9W (Ta), 7.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SC-70-6 Dual
- Supplier Device Package: PowerPAK® SC-70-6 Dual
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