SIAA02DJ-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 22A/52A PPAK
$0.63
Available to order
Reference Price (USD)
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$0.63000
500+
$0.6237
1000+
$0.6174
1500+
$0.6111
2000+
$0.6048
2500+
$0.5985
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Discover the SIAA02DJ-T1-GE3 from Vishay Siliconix, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the SIAA02DJ-T1-GE3 ensures reliable performance in demanding environments. Upgrade your circuit designs with Vishay Siliconix's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.7mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
- Vgs (Max): +12V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SC-70-6
- Package / Case: PowerPAK® SC-70-6
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