SIHF065N60E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 40A TO220
$7.17
Available to order
Reference Price (USD)
1+
$7.80000
10+
$7.05100
100+
$5.84560
500+
$4.94210
1,000+
$4.33973
2,500+
$4.18914
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SIHF065N60E-GE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SIHF065N60E-GE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220 Full Pack
- Package / Case: TO-220-3 Full Pack
Related Products
onsemi
NVMFS5C404NWFAFT3G
Nexperia USA Inc.
PMN70XPX
Texas Instruments
CSD18510KTTT
Alpha & Omega Semiconductor Inc.
AON2409
Diodes Incorporated
DMPH4025SFVWQ-13
Nexperia USA Inc.
PSMN1R5-40YSDX
Infineon Technologies
IPP045N10N3GXKSA1
Panjit International Inc.
PJMF900N60E1_T0_00001
Nexperia USA Inc.
PSMN2R8-40PS,127
Rohm Semiconductor