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SIHG33N60E-GE3

Vishay Siliconix
SIHG33N60E-GE3 Preview
Vishay Siliconix
MOSFET N-CH 600V 33A TO247AC
$7.00
Available to order
Reference Price (USD)
1+
$7.63000
10+
$6.84000
100+
$5.65200
500+
$4.62240
1,000+
$3.93600
2,500+
$3.75120
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 99mOhm @ 16.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3508 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 278W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AC
  • Package / Case: TO-247-3

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