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SIJA52ADP-T1-GE3

Vishay Siliconix
SIJA52ADP-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 40V 41.6A/131A PPAK
$0.66
Available to order
Reference Price (USD)
3,000+
$0.65764
6,000+
$0.62676
15,000+
$0.60471
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 131A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 1.63mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
  • Vgs (Max): +20V, -16V
  • Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 20 V
  • FET Feature: -
  • Power Dissipation (Max): 4.8W (Ta), 48W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8

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