TPH3208PS
Transphorm
Transphorm
GANFET N-CH 650V 20A TO220AB
$10.47
Available to order
Reference Price (USD)
1+
$11.00000
10+
$9.90000
25+
$9.02000
100+
$8.14000
300+
$7.48000
600+
$6.82000
1,200+
$6.16000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the TPH3208PS by Transphorm, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the TPH3208PS is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: GaNFET (Cascode Gallium Nitride FET)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 130mOhm @ 13A, 8V
- Vgs(th) (Max) @ Id: 2.6V @ 300µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 8 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
EPC
EPC2032
IXYS
IXTN40P50P
Infineon Technologies
IPW65R125C7XKSA1
Vishay Siliconix
SI2328DS-T1-E3
Texas Instruments
CSD17577Q5AT
onsemi
NTH4L080N120SC1
Infineon Technologies
BSC010NE2LSIATMA1
Infineon Technologies
IPZ60R070P6FKSA1
onsemi
HUF75344G3
Diodes Incorporated