SIR826DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 80V 60A PPAK SO-8
$3.08
Available to order
Reference Price (USD)
3,000+
$1.50575
6,000+
$1.45350
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the SIR826DP-T1-GE3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SIR826DP-T1-GE3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Renesas Electronics America Inc
UPA2521T1H-T2-AT
IXYS
IXFP4N100P
IXYS Integrated Circuits Division
CPC3902ZTR
Fairchild Semiconductor
FDMS8560S
Diodes Incorporated
DMN2991UT-13
Vishay Siliconix
SIR826BDP-T1-RE3
STMicroelectronics
STD96N3LLH6
Infineon Technologies
SPP11N60C3XKSA1
Renesas Electronics America Inc
UPA2807T1L-E1-AT
Alpha & Omega Semiconductor Inc.