SIR876BDP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 100-V (D-S) MOSFET POW
$1.37
Available to order
Reference Price (USD)
1+
$1.37000
500+
$1.3563
1000+
$1.3426
1500+
$1.3289
2000+
$1.3152
2500+
$1.3015
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SIR876BDP-T1-RE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SIR876BDP-T1-RE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 51.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10.8mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
onsemi
NTBG080N120SC1
onsemi
FCH040N65S3-F155
Diodes Incorporated
DMN62D0LFD-7
Vishay Siliconix
SIHK055N60EF-T1GE3
Diodes Incorporated
DMN30H14DLY-13
Infineon Technologies
IRF1404PBF
onsemi
NTMJS1D0N04CTWG
Vishay Siliconix
SQS405ENW-T1_GE3
STMicroelectronics
STF11N60DM2
Micro Commercial Co