SIS176LDN-T1-GE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 70 V (D-S) MOSFET POWE
$0.98
Available to order
Reference Price (USD)
1+
$0.98000
500+
$0.9702
1000+
$0.9604
1500+
$0.9506
2000+
$0.9408
2500+
$0.931
Exquisite packaging
Discount
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Enhance your electronic projects with the SIS176LDN-T1-GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SIS176LDN-T1-GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 70 V
- Current - Continuous Drain (Id) @ 25°C: 12.9A (Ta), 42.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 3.3V, 4.5V
- Rds On (Max) @ Id, Vgs: 10.9mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 35 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
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