SISB46DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 40V POWERPAK 1212-8
$0.93
Available to order
Reference Price (USD)
3,000+
$0.38222
6,000+
$0.35742
15,000+
$0.34502
30,000+
$0.33825
Exquisite packaging
Discount
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Optimize your electronic projects with the SISB46DN-T1-GE3 from Vishay Siliconix, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the SISB46DN-T1-GE3 ensures top-notch performance. Vishay Siliconix's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Rds On (Max) @ Id, Vgs: 11.71mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
- Power - Max: 23W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® 1212-8 Dual
- Supplier Device Package: PowerPAK® 1212-8 Dual
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