SIZ346DT-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 30V 17/30A 8POWER33
$0.76
Available to order
Reference Price (USD)
3,000+
$0.29508
6,000+
$0.27473
15,000+
$0.26455
30,000+
$0.25900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the high-performance SIZ346DT-T1-GE3 from Vishay Siliconix, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the SIZ346DT-T1-GE3 delivers unmatched performance. Trust Vishay Siliconix's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
- Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
- Power - Max: 16W, 16.7W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-Power33 (3x3)
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