Shopping cart

Subtotal: $0.00

SPP18P06PHXKSA1

Infineon Technologies
SPP18P06PHXKSA1 Preview
Infineon Technologies
MOSFET P-CH 60V 18.7A TO220-3
$1.79
Available to order
Reference Price (USD)
1+
$1.49000
10+
$1.31900
100+
$1.04240
500+
$0.80842
1,000+
$0.63822
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 81.1W (Ta)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3

Related Products

Infineon Technologies

IRFS4115TRL7PP

Renesas Electronics America Inc

NP90N04VDG-E1-AY

Rohm Semiconductor

RRL035P03TR

Taiwan Semiconductor Corporation

TSM210N02CX RFG

Diodes Incorporated

DMNH4011SK3Q-13

Toshiba Semiconductor and Storage

TK6R9P08QM,RQ

Goford Semiconductor

G10N10A

Top