SQS966ENW-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CHAN 60V
$1.03
Available to order
Reference Price (USD)
3,000+
$0.39816
6,000+
$0.37232
15,000+
$0.35940
30,000+
$0.35235
Exquisite packaging
Discount
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Upgrade your electronic designs with the SQS966ENW-T1_GE3 by Vishay Siliconix, a standout in the Discrete Semiconductor Products category. Specifically designed as a Transistors - FETs, MOSFETs - Arrays solution, this component excels in high-frequency applications with its low on-resistance and fast switching capabilities. Perfect for use in power supplies, motor control, and LED lighting systems, the SQS966ENW-T1_GE3 ensures energy efficiency and robust performance. Vishay Siliconix's commitment to quality makes this MOSFET array a top choice for engineers and designers worldwide.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
- Power - Max: 27.8W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: PowerPAK® 1212-8W Dual
- Supplier Device Package: PowerPAK® 1212-8W Dual
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