SS9018GBU
Fairchild Semiconductor
Fairchild Semiconductor
RF 0.05A, VERY HIGH FREQUENCY BA
$0.03
Available to order
Reference Price (USD)
1+
$0.20000
10+
$0.16800
100+
$0.08890
500+
$0.05850
1,000+
$0.03978
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing the SS9018GBU, a high-performance RF Bipolar Junction Transistor (BJT) from Fairchild Semiconductor, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The SS9018GBU features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on Fairchild Semiconductor for top-tier RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 1.1GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 400mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 72 @ 1mA, 5V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92-3
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