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SSM3J140TU,LXHF

Toshiba Semiconductor and Storage
SSM3J140TU,LXHF Preview
Toshiba Semiconductor and Storage
SMOS P-CH VDSS:-20V VGSS:-8/+6V
$0.58
Available to order
Reference Price (USD)
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500+
$0.5742
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$0.5684
1500+
$0.5626
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$0.5568
2500+
$0.551
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 25.8mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
  • Vgs (Max): +6V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads

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