SSM3K36MFV,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 500MA VESM
$0.41
Available to order
Reference Price (USD)
8,000+
$0.06300
16,000+
$0.05600
24,000+
$0.05250
56,000+
$0.04900
Exquisite packaging
Discount
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Enhance your electronic projects with the SSM3K36MFV,L3F single MOSFET from Toshiba Semiconductor and Storage. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Toshiba Semiconductor and Storage's SSM3K36MFV,L3F for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 5V
- Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.23 nC @ 4 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: VESM
- Package / Case: SOT-723
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