SSM6N35AFE,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET 2 N-CHANNEL 20V 250MA ES6
$0.41
Available to order
Reference Price (USD)
4,000+
$0.07000
8,000+
$0.06300
12,000+
$0.05600
28,000+
$0.05250
100,000+
$0.04900
Exquisite packaging
Discount
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The SSM6N35AFE,LF by Toshiba Semiconductor and Storage is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the SSM6N35AFE,LF provides reliable operation under stringent conditions. Toshiba Semiconductor and Storage's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
- Power - Max: 250mW
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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