SSM6N61NU,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET 2N-CH 20V 4A UDFN
$0.17
Available to order
Reference Price (USD)
3,000+
$0.15035
Exquisite packaging
Discount
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Choose the SSM6N61NU,LF from Toshiba Semiconductor and Storage for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the SSM6N61NU,LF stands out for its reliability and efficiency. Toshiba Semiconductor and Storage's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A
- Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-WDFN Exposed Pad
- Supplier Device Package: 6-UDFNB (2x2)
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